Laser direct writing of silicon field effect transistor sensors

摘要

We demonstrate a single step technique to fabricate silicon wires for field effect transistor sensors. Boron-doped silicon wires are fabricated using laser direct writing in combination with chemical vapor deposition, which has the advantages of precise control of position, orientation, and length, and in situ doping. The silicon wires can be fabricated to have very rough surfaces by controlling laser operation parameters, and thus, have large surface areas, enabling high sensitivity for sensing. Highly sensitive pH sensing is demonstrated. We expect our method can be expanded to the fabrication of various sensing devices beyond chemical sensors.