High temperature terahertz response in a p-type quantum dot-in-well photodetector

摘要

Terahertz (THz) response observed in a p-type InAs/InGaAs/GaAs quantum dots-in-a-well (DWELL) photodetector is reported. This detector displays expected mid-infrared response (from ∼3 to ∼10 μm) at temperatures below ∼100 K, while strong THz responses up to ∼4.28 THz is observed at higher temperatures (∼100–130 K). Responsivity and specific detectivity at 9.2 THz (32.6 μm) under applied bias of −0.4 V at 130 K are ∼0.3 mA/W and ∼1.4 × 10 Jones, respectively. Our results demonstrate the potential use of p-type DWELL in developing high operating temperature THz devices.