Investigation of the electrical switching and rectification characteristics of a single standalone n-type ZnO-nanowire/p-Si junction diode

摘要

In this work, n-ZnO-nanowire/p-Si junction diodes have been fabricated and characterized both physically as well as electrically. The measurements are performed on a single standalone nanowire diode for the investigation of electrical transport through the nano-junction. The rectification properties of the single n-ZnO nanowire/p-Si diode have been studied for various input waveforms and frequencies. The diodes exhibit very promising rectification as well as switching behavior with no charge storage effect and consequently, a switching time as small as ∼1 ms has been achieved.