Specific methodology for capacitance imaging by atomic force microscopy: A breakthrough towards an elimination of parasitic effects

摘要

On the basis of a home-made nanoscale impedance measurement device associated with a commercial atomic force microscope, a specific operating process is proposed in order to improve absolute (in sense of “nonrelative”) capacitance imaging by drastically reducing the parasitic effects due to stray capacitance, surface topography, and sample tilt. The method, combining a two-pass image acquisition with the exploitation of approach curves, has been validated on sets of calibration samples consisting in square parallel plate capacitors for which theoretical capacitance values were numerically calculated.