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Energy-dependent knock-on damage of organic-inorganic hybrid perovskites under electron beam irradiation:First-principles insights

机译:电子束照射下有机 - 无机杂交钙锌矿损伤的能量依赖性爆震:第一原理洞察

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摘要

Radiation damage mechanism of organic-inorganic hybrid perovskites under electron beam irradiation is currently under controversy. First-principles calculations of threshold energies show that the knock-on atomic displacement damage in CH_3NH_3PbI_3 is significant and highly energy-dependent, i.e., for the incident energy below 2.3 keV, knock-on damage is negligible; when the incident energy increases to 2.3, 26.4, 70.4, and 249.4 keV, H, C, N, and I displacements start, respectively; however, Pb does not displace even for 1 MeV incident energy. This finding explains the observation that 5 keV or higher-energy irradiation causes obvious changes in cathodoluminescence spectra while 2 keV causes only small changes. For the 300 keV high energy irradiation used in recent experiments, our results show that the H, C, N, and I knock-on displacements can cause the loss of CH_3NH_3 and I simultaneously, so the knock-on damage should play an important role in these experiments. The electron diffraction characterization cannot distinguish the CH_3NH_3 and I loss, so it might give confusing conclusions about damage processes. These results change our fundamental understandings on the radiation-damage mechanisms of CH_3NH_3PbI_3-related perovskites, laying the foundation for the transmission-electron-microscopy characterization of their microscopic structures.
机译:电子束照射下有机无机杂交钙锌矿的辐射损伤机理目前涉及争议。阈值能量的第一原理计算表明,CH_3NH_3PBI_3中的敲击原子位移损伤是显着的,高度能量的损伤,即,对于低于2.3 keV的入射能量,敲击损坏可忽略不计;当入射能量增加到2.3,26.4,70.4和249.4 kev,h,c,n和我的移动开始;然而,即使为1 MEV入射能量也不会取代PB。该发现说明了观察结果,即5keV或更高能量照射导致阴极发光光谱的明显变化,而2keV仅导致少量变化。对于最近实验中使用的300keV高能辐照,我们的结果表明,H,C,N和I敲击位移会导致CH_3NH_3和I同时损失,因此敲击损坏应发挥重要作用在这些实验中。电子衍射表征不能区分CH_3NH_3和损失,因此它可能会对损伤过程产生混乱的结论。这些结果改变了对CH_3NH_3PBI_3相关钙钛矿的辐射损伤机制的基本谅解,为其微观结构的透射电子显微镜表征奠定基础。

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  • 来源
    《Applied Physics Letters》 |2021年第12期|123901.1-123901.6|共6页
  • 作者单位

    State Key Laboratory of ASIC and System School of Microelectronics and Key Laboratory of Computational Physical Sciences(MOE) Fudan University Shanghai 200433 China Shanghai Qi Zhi Institute Shanghai 200030 China;

    Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics East China Normal University Shanghai 200241 China;

    State Key Laboratory of ASIC and System School of Microelectronics and Key Laboratory of Computational Physical Sciences(MOE) Fudan University Shanghai 200433 China Shanghai Qi Zhi Institute Shanghai 200030 China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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