Aqueous solution-deposited aluminum-gallium-oxide alloy gate dielectrics for low voltage fully oxide thin film transistors

摘要

Different to conventional high-κ gate dielectric fabrication that usually generates porosity and pinhole sites when evaporating solvents or impurities in the thin-film formation process, herein, we report a simple aqueous route to deposit aluminum-gallium-oxide (AGO) alloy gate dielectrics. Compared to GaO_x dielectric, higher performance and aqueous solution-processed low voltage fully oxide thin film transistors (TFTs) are achieved based on the AGO dielectric films. The solution-processed IZO(300 °C)/AGO TFT with optimal performance shows a good charge carrier saturation mobility of 55.4 cm~2 V~(-1) s~(-1), an on/off current ratio of ~10~4, threshold voltage of 0.1 V, and a low operation voltage of 5 V. Our study represents a significant step toward the development of low-cost, easy-control, and large-area oxide electronics.