Fine tuning epitaxial strain in ferroelectrics: PbxSr1−xTiO3 on DyScO3

摘要

Epitaxial strain can be efficiently used to modify the properties of ferroelectric thin films. From thenexperimental viewpoint, the challenge is to fine-tune the magnitude of the strain. We illustrate herenhow, by using a suitable combination of composition and substrate, the magnitude of the epitaxialnstrain can be controlled in a continuous manner. The phase diagram of PbxSr1−xTiO3 films grownnepitaxially on u0002110u0003-DyScO3 is calculated using a Devonshire–Landau approach. A boundarynbetween in-plane and out-of-plane oriented ferroelectric phases is predicted to take place at xnu00040.8. A series of PbxSr1−xTiO3 epitaxial films grown by molecular beam epitaxy shows goodnagreement with the proposed phase diagram. © 2010 American Institute of Physics.nu0005doi:10.1063/1.3532103