Room temperature gate modulation of electron spin relaxation time in (110)-oriented GaAs/AlGaAs quantum wells

摘要

A (110)-oriented p-i-n structure with GaAs/AlGaAs quantum wells (QWs) was fabricated, and the effect of an applied electric field on the electron spin relaxation time was investigated by utilizing polarization- and time-resolved photoluminescence measurements. We demonstrated a tenfold modulation of the electron spin relaxation time from 4.0 to 0.3 ns in the QWs through the Rashba spin-orbit coupling induced by applying an external electric field at room temperature