Enhancement of spontaneous emission rate and reduction in amplified spontaneous emission threshold in electrodeposited three-dimensional ZnO photonic crystal

摘要

ZnO photonic crystal u0002PCu0003 with face-center-cube type structure is fabricated by electrodepositionnusing holographic lithographically made organic u0002SU-8u0003 template. Photonic band gap effectnu0002reflection peak and transmission dip in infrared spectral regionu0003 is clearly seen. Observation ofnstrong enhancement and blueshift of the emission peak u0002from 383.8 to 378.8 nmu0003, shortening of thenexciton photoluminescence lifetime u0002from 88 to 34 psu0003, and reduction in amplified spontaneousnemission threshold of ZnO PC compared to that of the reference nonstructured electrodeposited ZnOnshowed clear evidence of PC structure affecting the ZnO exciton emission. © 2010 AmericannInstitute of Physics. u0004doi:10.1063/1.3499274