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Enhancement of spontaneous emission rate and reduction in amplified spontaneous emission threshold in electrodeposited three-dimensional ZnO photonic crystal

机译:电沉积三维ZnO光子晶体中自发发射率的提高与放大自发辐射阈值的降低

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摘要

ZnO photonic crystal (PC) with face-center-cube type structure is fabricated by electrodeposition using holographic lithographically made organic (SU-8) template. Photonic band gap effect (reflection peak and transmission dip in infrared spectral region) is clearly seen. Observation of strong enhancement and blueshift of the emission peak (from 383.8 to 378.8 nm), shortening of the exciton photoluminescence lifetime (from 88 to 34 ps), and reduction in amplified spontaneous emission threshold of ZnO PC compared to that of the reference nonstructured electrodeposited ZnO showed clear evidence of PC structure affecting the ZnO exciton emission. © 2010 American Institute of Physics.
机译:使用全息照相制版的有机(SU-8)模板通过电沉积来制造具有面心立方型结构的ZnO光子晶体(PC)。清晰可见光子带隙效应(红外光谱区域的反射峰和透射谷)。观察到与参考非结构电沉积相比,ZnO PC的发射峰(从383.8 nm到383.8 nm)强烈增强和蓝移,激子光致发光寿命从88 ps缩短(从88 ps到34 ps),自发放大阈值降低ZnO显示出PC结构影响ZnO激子发射的明确证据。 ©2010美国物理研究所。

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