Visible-blind deep-ultraviolet Schottky photodetector with a photocurrent

摘要

We report on the visible-blind deep-ultraviolet u0002DUVu0003 photodetectors with metal-nsemiconductor-metal u0002MSMu0003 Schottky contacts based on individual Zn2GeO4 nanowirensingle-crystals. At an 8 V bias voltage, the device shows an extremely low dark currentnu0002u00020.1 pAu0003, a responsivity of 38.3 A/W u0002corresponding gain u0004200u0003, a high DUV-to-visiblendiscrimination ratio up to u0004104n, and a relatively fast response time upon 245 nm DUV illumination.nBy analyzing the light-intensity-dependent photocurrent generation and carrier transport, thenphotogenerated holes trapped in Schottky barrier and shrinking of depletion region under DUVnillumination at the metal/Zn2GeO4 interface are proposed for the carrier injection and thenphotocurrent gain. © 2010 American Institute of Physics. u0005doi:10.1063/1.3491212