Schottky barrier detectors for visible-blind ultraviolet detection

摘要

The invention concerns the fabrication and characterization of vertical geometry transparent Schottky barrier ultraviolet detectors based on n.sup.- /n.sup.+ -GaN and AlGaN structures grown over sapphire substrates. Mesa geometry devices of different active areas were fabricated and characterized for spectral responsitivity, speed and noise characteristics. The invention also concerns the fabrication and characterization of an 8×8 Schottky barrier photodiode array on GaN with a pixel size of 200 &mgr;m by 200 &mgr;m.