A metallic molybdenum suboxide buffer layer for organic electronic

摘要

Molybdenum trioxide u0002MoO3u0003 is commonly used as a buffer layer in organic electronic devices tonimprove hole-injection. However, stoichiometric MoO3 is an insulator, and adds a series resistance.nHere it is shown that a MoO3 buffer layer can be reduced to form a metallic oxide buffernthat exhibits more favorable energy-level alignment with N,Nu0002-diphenyl-N,Nu0002-bis-nu00021-naphthylu0003-1-1u0002-biphenyl-4,4u0002-diamine u0002u0002-NPDu0003 than does MoO3. This buffer layer thus providesnthe conductivity of a metal with the favorable energy alignment of an oxide. Photoemission showsnthe reduced oxide contains Mo4+ and Mo5+, with a metallic valence band structure similar to MoO2.n© 2010 American Institute of Physics. u0004doi:10.1063/1.3432447