Carrier transport in strained p-channel field-effect transistorsrnwith diamondlike carbon liner stressor

摘要

We report the investigation of carrier backscattering characteristics of compressively strainedrnp-channel field-effect transistors u0001p-FETsu0002 with diamondlike carbon u0001DLCu0002 liner stressor. p-FETsrnstrained by the DLC liner exhibit up to u000340% enhancement in carrier injection velocity u0001inj.rnHowever, a slight reduction in ballistic efficiency Bsat is also observed in the DLC stressed p-FETs.rnDespite the Bsat degradation, an overall boost in saturation drive current IDsat is achieved. For a DLCrnstressed p-FET with gate length LG=90 nm, a u000336% enhancement in IDsat is observed with arnu000340% improvement in u0001inj. The dependence of IDsat on u0001inj and carrier mobility u0002 is also discussedrnin this letter