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Low-temperature dissipation and its persistent photoinduced change in AlGaAs/CaAs-based nanomechanical resonators

机译:基于AlGaAs / Caas的纳米机械谐振器的低温耗散及其持续光脉冲变化

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摘要

Low-temperature dissipation of mechanical energy is studied in AlGaAs/GaAs-based nanomechanical resonators with a two-dimensional electron gas. It is experimentally shown that the temperature dependence of dissipation demonstrates a peak near 30K. A short illumination leads to a persistent change in the quality factor, which can be compared with the persistent photoconductivity effect. In particular, the illumination persistently suppresses the dissipation peak. This suppression shows that the nature of the peak is not related to the thermoelastic and Akhiezer damping. A hypothesis associating the peak with DX-centers or similar low-symmetry and light-sensitive centers is proposed. The observed effects should be taken into account when studying the low-temperature dissipation using optical methods.
机译:利用二维电子气体,在基于AlGaAS / GaAs的纳米机械谐振器中研究了机械能的低温耗散。实验结果表明,耗散的温度依赖性证明了30K附近的峰值。短照相导致质量因子的持续变化,可以与持续的光电导效应进行比较。特别地,照明持续抑制耗散峰值。这种抑制表明,峰的性质与热弹性和Akhiezer阻尼无关。建议将峰与DX中心或类似的低对称和光敏中心相关联的假设。在使用光学方法研究低温耗散时,应考虑观察到的效果。

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  • 来源
    《Applied Physics Letters》 |2020年第5期|053104.1-053104.5|共5页
  • 作者单位

    Rzhanov Inst Semicond Phys SB RAS Lavrentieva Ave 13 Novosibirsk 630090 Russia;

    Rzhanov Inst Semicond Phys SB RAS Lavrentieva Ave 13 Novosibirsk 630090 Russia|Novosibirsk State Univ Dept Phys Pirogova Str 2 Novosibirsk 630090 Russia;

    Rzhanov Inst Semicond Phys SB RAS Lavrentieva Ave 13 Novosibirsk 630090 Russia|Novosibirsk State Univ Dept Phys Pirogova Str 2 Novosibirsk 630090 Russia;

    Rzhanov Inst Semicond Phys SB RAS Lavrentieva Ave 13 Novosibirsk 630090 Russia|Novosibirsk State Univ Dept Phys Pirogova Str 2 Novosibirsk 630090 Russia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-18 22:18:05

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