Photon-mediated entanglement scheme between a ZnO semiconductor defect and a trapped Yb ion

摘要

We propose an optical scheme to generate an entangled state between a trapped ion and a solid state donor qubit through which-path erasure of identical photons emitted from the two systems. The proposed scheme leverages the similar transition frequencies between In donor bound excitons in ZnO and the ~2P_(1/2) to ~2S_(1/2) transition in Yb~+. The lifetime of the relevant ionic state is longer than that of the ZnO system by a factor of 6, leading to a mismatch in the temporal profiles of emitted photons. A detuned cavity-assisted Raman scheme weakly excites the donor with a shaped laser pulse to generate photons with a 0.99 temporal overlap to the Yb~+ emission and partially shift the emission of the defect toward the Yb~+ transition. The remaining photon shift is accomplished via the dc Stark effect. We show that an entanglement rate of 2.1 × 10~4 s~(-1) and an entanglement fidelity of 94% can be attained using a weak excitation scheme with reasonable parameters.