机译:通过快速冷却方法制备的SiC(0001)表面上的自由静止石墨烯结构
Graduate School of Engineering Science Osaka University 1-3 Machikaneyama Toyonaka Osaka 560-8531 Japan;
Graduate School of Engineering Science Osaka University 1-3 Machikaneyama Toyonaka Osaka 560-8531 Japan;
Institute of Materials and Systems for Sustainability Nagoya University Aichi 464-8603 Japan College of Physics and Electronics Information Inner Mongolia University for Nationalities Tongliao China;
Institute of Materials and Systems for Sustainability Nagoya University Aichi 464-8603 Japan Advanced Science Research Center Japan Atomic Energy Agency Naka-gun 319.1195 Japan;
Department of Materials Science and Engineering Nagoya University Aichi 464-8603 Japan;
Institute of Materials and Systems for Sustainability Nagoya University Aichi 464-8603 Japan;
Department of Physics Tohoku University 6-3 Aramaki Aza-Aoba Aoba-ku Sendai 980-8578 Japan Materials Research Center for Element Strategy Tokyo Institute of Technology Yokohama 226-8501 Japan;
机译:通过熨斗的可操纵闭合在SiC(0001)表面上制造准防滑石墨烯
机译:未重构的6H-SiC {0001}表面和外延石墨烯的原子和电子结构的第一性原理研究
机译:4H-SiC(0001)超精密表面上的单层和双层石墨烯薄膜的结构和磁性
机译:SiC(0001)表面上外延石墨烯岛的原子结构及其磁电效应
机译:在碳化硅{0001}表面上形成的外延石墨烯的结构研究。
机译:表面改性和磨料抛光之间的竞争:控制4H-SiC表面原子结构的方法(0001)
机译:准自支撑石墨烯层的密度泛函理论研究 4H-siC(0001)表面被氢原子解耦