机译:60 A / W高压可以雪崩光电二极管展示强大的雪崩和高增益高达525 k
Department of Electrical Engineering Stanford University Stanford California 94305 USA;
Department of Electrical and Computer Engineering University of California Davis California 95616 USA;
Department of Physics and Astronomy San Francisco State University San Francisco California 94132 USA;
Department of Physics and Astronomy San Francisco State University San Francisco California 94132 USA;
Department of Electrical Engineering Stanford University Stanford California 94305 USA Department of Electrical and Computer Engineering University of California Davis California 95616 USA;
机译:Al
机译:死区对X射线雪崩光电二极管雪崩增益分布的影响
机译:AlAsSb雪崩光电二极管雪崩增益的高温和波长依赖性
机译:增益取决于雪崩持续时间和雪崩光电二极管的增益/ spl次/带宽乘积
机译:蒙特卡洛模拟低噪声和高速雪崩光电二极管的增益,噪声和速度。
机译:CMOS光电接收器IC带有片上雪崩光电二极管用于家庭监控激光雷达传感器
机译:具有高可复制雪崩增益的基于AlxGa1-xN的雪崩光电二极管
机译:位移损伤对低击穿电压si雪崩光电二极管的时间分辨增益和带宽的影响