Formation of laterally ordered quantum dot molecules by in situ nanosecond laser interference

摘要

We demonstrate the growth and surface characterization of laterally ordered arrays of InAs quantum dot molecules (QDMs) on GaAs (100) substrates produced by a combination of in situ interferometric nanopatterning and molecular beam epitaxy growth. Four-beam ultraviolet laser interference is applied during the growth process resulting in the formation of quasi two-dimensional islands due to localized surface diffusion. With further InAs deposition, the edges of the islands are observed to act as preferential sites for the nucleation of InAs quantum dots. Well-ordered square arrays of lateral QDMs with a period of 300 nm and site occupancy ranging from single dot up to hexa-molecules are obtained by varying the InAs coverage from 1.55 ML to 1.75 ML.