Growth of Self-Assembled Quantum Dots, Quantum Rings, and Lateral Bi-Quantum-Dot Molecules by Gas-Source Molecular Beam Epitaxy

摘要

Self-assembled InAs quantum dots, quantum rings, and lateral biquantum-dot molecules have been achieved using gas-source molecular beam epitaxy under As{sub}2 overpressure. Their morphologies and temperature-dependent photoluminescence of QDs and BQDMs are presented.