机译:在独立式甘蓝中剥离半极蓝和绿色氮化物LED
Department of Chemical Engineering University of California-Santa Barbara Santa Barbara California 93106-5080 USA Solid State Lighting and Energy Electronics Center University of California-Santa Barbara Santa Barbara California 93106-5055 USA;
Department of Chemical Engineering University of California-Santa Barbara Santa Barbara California 93106-5080 USA Solid State Lighting and Energy Electronics Center University of California-Santa Barbara Santa Barbara California 93106-5055 USA;
Solid State Lighting and Energy Electronics Center University of California-Santa Barbara Santa Barbara California 93106-5055 USA;
Solid State Lighting and Energy Electronics Center University of California-Santa Barbara Santa Barbara California 93106-5055 USA;
Solid State Lighting and Energy Electronics Center University of California-Santa Barbara Santa Barbara California 93106-5055 USA Materials Department University of California-Santa Barbara Santa Barbara California 93106-5050 USA;
Department of Chemical Engineering University of California-Santa Barbara Santa Barbara California 93106-5080 USA Solid State Lighting and Energy Electronics Center University of California-Santa Barbara Santa Barbara California 93106-5055 USA;
机译:在半极性(3031)自由站立GaN衬底上生长的InGaN / GaN蓝色激光二极管
机译:在半极性自立式GaN衬底上生长的(AI,ln)GaN异质外延层中异质界面处形成失配位错
机译:剥离和应变松弛对150 mm直径Si(111)衬底上生长的InGaN / GaN蓝色LED光学性能的影响
机译:在非极性和Semipolar独立GaN基板上种植的光电器件
机译:利用纳米技术在Si上生长,制造和表征基于InGaN / GaN的蓝色,绿色和黄色LED。
机译:应变松弛对在具有溅射AlN成核层的4英寸蓝宝石衬底上生长的InGaN / GaN绿色LED的性能的影响
机译:高质量的Semipolar GaN / Sapphire模板中生长高效的半极性IngaN长波长发光二极管和蓝色激光二极管的研制
机译:基于GaN微LED阵列的全尺寸自发光蓝色和绿色微显示器