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Universal trade-off between proximity and aspect-ratio in optimizing the field enhancement factor of large area field emitters

机译:在优化大面积场发射器的现场增强因子方面的通用权衡

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摘要

The apex-field enhancement factor (aFEF) is regarded as a meaningful parameter to characterize field electron emission (FE) devices. If experimentally extracted from orthodox current-voltage characteristics, this parameter reliably quantifies how much the emitter's sharp tip locally magnifies the applied external electrostatic field. Many experimental works have reported FE from arrays of carbon nanotubes with fixed spacing (c) between nearest-neighbor emitters, fixed apex-radii (r), and various height (h) and claimed the existence of an aspect ratio (h/r) at which a local maximum effective aFEF is achieved. Hereafter, it is shown that those results are not consistent with simulations using basic electrostatics for both finite or infinite regular square arrays of emitters. Quite interestingly, our results show that the aFEF (γ_a), for an emitter in an infinity regular array, simply saturates at γ_s for h (≥) 0.7c. Additionally, we found a universal behavior in which γ_a scales as γ_a ~ γ_s(h/c)~(0.84), when h (≤) 0.7c, for h/r (≥) 50. These results provide a practical rule for the design of large arrays of field emitters, which can be used to build FE nanoelectromechanical resonators with both mechanical strength and reduced Joule losses.
机译:APEX-Field增强因子(AFEF)被视为有意义的参数,以表征现场电子发射(FE)设备。如果从正统电流 - 电压特性进行实验地提取,则该参数可靠地量化发射器的尖锐尖端局部放大了所施加的外部静电场。许多实验工程报道了来自碳纳米管阵列的Fe,最近的邻近发射器之间的固定间隔(c),固定的apex-radii(r)和各种高度(h),并要求纵横比(h / r)存在在达到局部最大有效的基础。下文中,表明这些结果与使用基本静电的模拟对于有限或无限常规的发射器的模拟不一致。非常有趣的是,我们的结果表明,无限常规阵列中的发射器的AFEF(γ_A)只是在H(≥)0.7C的γ_S时饱和。另外,我们发现了一种普遍的行为,其中γ_A刻度为γ_a〜γ_s(h / c)〜(0.84),当h(≤)0.7c时,对于h / r(≥)50。这些结果为此提供了实际规则大型现场发射器阵列的设计,可用于构建具有机械强度的Fe纳米机电谐振器,减少焦耳损失。

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  • 来源
    《Applied Physics Letters》 |2020年第20期|203103.1-203103.4|共4页
  • 作者单位

    Instituto de Fisica Universidade Federal da Bahia Campus Universitario da Federaqao Rua Barao de Jeremoabo s 40170-115 Salvador BA Brazil;

    Department of Exact Sciences and Education (CEE) Universidade Federal de Santa Catarina Campus Blumenau Rua Joao Pessoa 2514 Velha Blumenau 89036-004 SC Brazil;

    Spintronics and Vacuum Nanoelectronics Laboratory University of Cincinnati Cincinnati Ohio 45221 USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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  • 入库时间 2022-08-18 22:17:56

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