MOCVD growth of InP-based 1.3 μm quantum dash lasers on (001) Si

摘要

Quantum dot and quantum dash (QDash) lasers exhibit lower threshold, less temperature sensitivity, and larger modulation bandwidths than the conventional quantum well lasers. For Ⅲ-Ⅴ lasers monolithically grown on Si, the stronger carrier confinement and the discret distribution of these three-dimensional (3D) quantum structures add to their immunity to material defects resulted from hetero-epitaxy. In this study, we report InAs/InAlGaAs/InP QDash lasers emitting at 1.3 μm directly grown on compliant InP/Si substrates by metalorganic chemical vapor deposition. Room-temperature lasing has been demonstrated on both nano-V-groove patterned and unpatterned planar (001) Si under pulsed electrical pumping, with a low threshold current density of 1.05kA/cm~2. A comparison of lasers grown on these two categories of InP/Si templates in terms of material quality and device performance is presented. Results presented in this work demonstrate the possibility of integrating both datacom and telecom lasers on Si, using the same InAs/InP quantum dash material system on a developed InP-on-Si virtual substrate.