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Growth and properties of self assembled indium arsenide quantum dash laser active regions.

机译:自组装砷化铟量子点激光有源区的生长和性能。

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摘要

Self-organized growth mechanisms have been intensively investigated for the last decade as a powerful way to achieve a variety of high quality quantum confined structures. Among these varieties is the growth of InAs quantum dashes on InP. This dissertation discusses the growth aspects of quantum dashes and their application as active regions in semiconductor laser diodes. A comprehensive study on MBE growth conditions and structural and optical properties of quantum dashes is conducted as well as an investigation of the influence of the quantum dashes on performance parameters of the laser diodes.;The main parameters that influence the structural asymmetry of the quantum dashes have been identified as the InAs coverage as well as surface morphology and the strain with respect to the base crystal, on which the quantum dashes are grown. The optical emission wavelength is defined by the size of the quantum dashes and the quantum well, in which the dashes are incorporated, and ranges from less than 1.47 mum to beyond 2 mum.;Diode lasers based on the quantum dashes as active medium with 2 mum emission wavelength have been fabricated and characterized. On the short wavelength side, lasers with emission at 1.47 mum have been grown. These are the longest and shortest wavelengths achieved with quantum dash lasers on InP.;A comparison of the beam quality of quantum dash lasers with that of equivalent quantum well lasers reveals no advantage of quantum dashes over quantum wells. This is consistent with other investigations on the linewidth enhancement factor associated with quantum dashes and quantum wells.;A study on the link between the morphological anisotropy and the optical polarization anisotropy of quantum dashes shows that the polarization anisotropy reduces upon coverage of the dashes, and that the correlation between optical anisotropy of covered dashes with the morphological anisotropy of exposed dashes is very low. Growing structurally more symmetric dot-like quantum dashes does not turn their optical properties into those of quantum dots.
机译:在过去十年中,对自组织生长机制进行了深入研究,这是获得各种高质量量子约束结构的有力方法。这些品种中有InP上InAs量子破折号的增长。本文讨论了量子破折号的生长方面及其在半导体激光二极管中作为有源区的应用。全面研究了MBE的生长条件以及量子破折号的结构和光学性质,并研究了量子破折号对激光二极管性能参数的影响。;影响量子破折号结构不对称性的主要参数已经确定其为InAs覆盖率以及表面形貌和相对于生长量子破折号的基础晶体的应变。发射光的波长由量子点的大小和量子点的大小决定,量子点的大小在小于1.47微米到超过2微米之间;基于量子点的二极管激光器作为活性介质,其波长为2已经制造并表征了最大发射波长。在短波长一侧,已经发射出了1.47微米的激光。这些是在InP上用量子破折号激光器实现的最长和最短波长;将量子破折号激光器的光束质量与等效量子阱激光器的光束质量进行比较发现,量子破折号没有优于量子阱的优势。这与其他有关量子破折号和量子阱的线宽增强因子的研究是一致的。;对量子破折号的形态各向异性和光偏振各向异性之间的联系的研究表明,极化破折号会随着破折号的覆盖而减小,并且覆盖短划线的光学各向异性与裸露短划线的形态各向异性之间的相关性非常低。结构上越来越对称的点状量子破折号不会将其光学性质转变成量子点的光学性质。

著录项

  • 作者

    Rotter, Thomas J.;

  • 作者单位

    The University of New Mexico.;

  • 授予单位 The University of New Mexico.;
  • 学科 Physics Optics.
  • 学位 Ph.D.
  • 年度 2007
  • 页码 130 p.
  • 总页数 130
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-17 11:40:03

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