机译:VO_2薄膜中的霍尔电压反转和结构相变
Laboratory of Solid State Microstructures Nanjing University Nanjing 210093 China Cuangdong Provincial Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China;
Laboratory of Solid State Microstructures Nanjing University Nanjing 210093 China;
Cuangdong Provincial Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China;
State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu Sichuan 610054 China;
机译:M1-相VO_2和M_2-相VO_2:Cr薄膜包覆的微悬臂梁的相变行为
机译:使用超薄Al_2O_3作为缓冲层调整硅衬底上VO_2薄膜的相变
机译:T相Cr掺杂和M1相未掺杂的VO_2薄膜中的绝缘金属过渡
机译:VO_2薄膜的相分析及VO_2电触发金属-绝缘体转变的机理
机译:分子束外延生长的砷化锰薄膜的结构和磁相变
机译:通过HALL偏移电压探测InGazno薄膜的传导带边的能量轮廓
机译:无结构的一阶金属绝缘子过渡观察 VO_2中的相变
机译:光学和薄膜中VO(sub 2)纳米晶体结构相变的光学光谱。