Physical mechanism on the suppression of dynamic resistance degradation by multi-mesa-channel in AlGaN/CaN high electron mobility transistors

摘要

In this letter, the suppression of dynamic on-state resistance (R-ON) degradation for faster dynamic R-ON recovery is achieved by the multimesa-channel (MMC) structure in AlGaN/GaN high electron mobility transistors. The measurement results are discussed with the physical mechanisms investigated. The initial transient R-ON degradation is reduced in the MMC structure, resulting from the lower peak electric field around the drain-side gate edge in the trigate structure compared to that in a planar device. The faster dynamic R-ON recovery in MMC devices is attributed to the quick emission of electrons at sidewall traps of shallower energy levels. The energy levels of dominant traps at the sidewall and top interfaces are found to be 0.26 eV and 0.37 eV below the conduction band edge, respectively, verified by Technology Computer Aided Design simulations in agreement with the measurement data.