机译:Ge / CeSn核/壳纳米线的应变工程
Eindhoven Univ Technol Dept Appl Phys NL-5600 MB Eindhoven Netherlands|Ecole Polytech Montreal Dept Engn Phys CP 6079 Succ Ctr Ville Montreal PQ H3C 3A7 Canada;
Univ Milano Bicocca L NESS I-20125 Milan Italy|Univ Milano Bicocca Dept Mat Sci I-20125 Milan Italy;
Eindhoven Univ Technol Dept Appl Phys NL-5600 MB Eindhoven Netherlands|Eurofins Mat Sci BV High Tech Campus 11 NL-5656 AE Eindhoven Netherlands;
Eindhoven Univ Technol Dept Appl Phys NL-5600 MB Eindhoven Netherlands|Beijing Univ Technol Pingleyuan 100 Beijing 100124 Peoples R China|Delft Univ Technol Kavli Inst Nanosci NL-2600 GA Delft Netherlands;
Eindhoven Univ Technol Dept Appl Phys NL-5600 MB Eindhoven Netherlands;
Eindhoven Univ Technol Dept Appl Phys NL-5600 MB Eindhoven Netherlands|Delft Univ Technol Kavli Inst Nanosci NL-2600 GA Delft Netherlands;
机译:Si / Ge核壳纳米线中带隙的应变工程
机译:核心壳碳化硅纳米线的应变工程,用于机械和压阻性特征
机译:通过应变和接口工程,增强Bi / Te芯/壳壳异质结构纳米线的热电性能
机译:应力和应变分布对用于太阳能收集的GaN / InGaN / GaN核/壳/壳径向纳米线性能分析的影响
机译:调整核-壳和核-多壳纳米线中的光学和等离子体共振。
机译:通过应变工程在具有大晶格失配的核/壳纳米线中实现可广泛调谐的GaAs带隙
机译:广泛调谐的GaAs带隙,通过核心/壳纳米线的应变工程,具有大格式不匹配