Growth and fabrication of GaN/Er:GaN/GaN core-cladding planar waveguides

摘要

Erbium doped gallium nitride (Er:GaN) bulk crystals have emerged as a promising optical gain material for high energy lasers (HELs) operating at the 1.5m retina-safe spectral region. Among the many designs of HEL gain medium, the core-cladding planar waveguide (PWG) structure is highly desired due to its abilities to provide excellent optical confinement and heat dissipation. We report the realization of a GaN/Er:GaN/GaN core-cladding PWG structure synthesized by hydride vapor phase epitaxy and processed by mechanical and chemical-mechanical polishing. An Er doping concentration of [Er] = 3x10(19) atoms/cm(3) has been attained in the core layer, as confirmed by secondary ion mass spectrometry measurements. A strong 1.54m emission line was detected from the structure under 980nm resonant excitation. It was shown that these PWGs can achieve a 96% optical confinement in the Er:GaN core layer having a thickness of 50m and [Er] = 3x10(19) atoms/cm(3). This work represents an important step toward the realization of practical Er:GaN gain medium for retina-safe HEL applications.