Single layer MoS_2 nanoribbon field effect transistor

摘要

We study field effect transistor characteristics in etched single layer MoS2 nanoribbon devices of width 50 nm with ohmic contacts. We employ a SF6 dry plasma process to etch MoS2 nanoribbons using low etching (RE) power allowing very good control over the etching rate. Transconductance measurements reveal a steep sub-threshold slope of 3.5 V/dec using a global backgate. Moreover, we measure a high current density of 38 mu A/mu m, resulting in a high on/off ratio of the order of 10(5). We observe mobility reaching as high as 50 cm(2)/Vs with increasing source-drain bias.