Effects of trifluoromethyl substituents on interfacial and bulk polarization of polystyrene gate dielectrics

摘要

The ability to control the bulk and interfacial polarization of dielectric polymers is important to their application in organic electronics. We examine the effect of the trifluoromethyl substituent on poly(3-trifluoromethylstyrene) (P3TFMS) as compared to unsubstituted polystyrene (PS) on the I-V relationships of pentacene-based organic field-effect transistors (OFETs). Single-and double-layered films of these polymers were used, with lower layers crosslinked through vinylbenzocyclobutene comonomers before deposition of upper layers. Control experiments verified that the electronic effect of the crosslinking was negligible. We found that the TFM substituent markedly and independently affected both the initial threshold voltage V-th and the nonvolatile, shifted V-th observed after the application of static gate voltage, depending on its position adjacent or apart from the pentacene. The trifluoromethyl-bearing polymers exhibited significantly lower magnitude initial threshold voltages (V-th,(i) of ca. -17 V for P3TFMS compared to -35V for PS), large threshold voltage shifts after charging by the application of static electric fields (Delta V-th of ca. 32V for P3TFMS and 17 V for PS), and greater stability of the Delta V-th under repeated charge/discharge cycles. These results are consistent with P3TFMS having fewer interfacial trap states butmore stable bulk trap states. The results are applicable to organo-electronic systems such as piezoelectrics for energy harvesting and nonvolatile OFETs such as memory, sensing, and logic elements.