机译:超薄HfO_2栅极电介质可实现IGZO薄膜晶体管的半伏运行
Shandong Univ, Ctr Nanoelect, Jinan 250100, Shandong, Peoples R China;
Shandong Univ, Ctr Nanoelect, Jinan 250100, Shandong, Peoples R China;
Shandong Univ, Ctr Nanoelect, Jinan 250100, Shandong, Peoples R China;
Shandong Univ, Ctr Nanoelect, Jinan 250100, Shandong, Peoples R China;
Shandong Univ, Ctr Nanoelect, Jinan 250100, Shandong, Peoples R China;
Shandong Univ, Ctr Nanoelect, Jinan 250100, Shandong, Peoples R China;
Shandong Univ, Ctr Nanoelect, Jinan 250100, Shandong, Peoples R China;
机译:超薄Al_2O_3栅极电介质实现IGZO薄膜晶体管的低电压运行
机译:用于柔性a-IGZO薄膜晶体管的溅射高k HfO_2栅极电介质的低温制造
机译:具有HF_(1-X)AL_XO栅极电介质的TI-IGZO薄膜晶体管的电气性能和可靠性
机译:电子束沉积Al
机译:了解具有高k栅极介电常数的固溶处理金属氧化物薄膜晶体管的迁移率。
机译:电子束沉积栅极电介质对a-IGZO薄膜晶体管的沟道宽度相关性能和可靠性的比较研究
机译:超薄al 2 sub> O 3 sub>栅极介质实现IGZO薄膜晶体管的低压工作