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Enhancement of critical current density in direct-current-sputtered TlBa_2Ca_2Cu_3O_(9±δ) superconducting thin films

机译:直流溅射TlBa_2Ca_2Cu_3O_(9±δ)超导薄膜中临界电流密度的提高

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摘要

A multistep postannealing scheme has been developed for preparing nearly single phased, c-axis oriented TlBa_2Ca_2Cu_3O_x (Tl-1223) superconducting thin films fabricated by the direct-current-sputtering process. Films obtained by the present process have shown, for the first time in this system, a critical current density (J_c) above 10~6 A/cm~2 at 77 K with a zero-resistance transition temperature T_(c0) ≈ 110 K. The order of magnitude enhancement in J_c is attributed to the improvement of film morphology which, in turn, removed most of the weak links encountered previously.
机译:已经开发了一种多步骤后退火方案,用于制备通过直流溅射工艺制备的几乎单相,c轴取向的TlBa_2Ca_2Cu_3O_x(Tl-1223)超导薄膜。通过本发明方法制得的膜在该系统中首次显示出在77 K下具有零电阻转变温度T_(c0)≈110 K时高于10〜6 A / cm〜2的临界电流密度(J_c)。 J_c中数量级的增强归因于薄膜形态的改善,从而消除了以前遇到的大多数薄弱环节。

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