High deposition rate amorphous silicon-based multijunction solar cell

摘要

We have investigated and optimized the deposition conditions for growth of amorphous silicon (a-Si:H) and silicon-germanium (a-SiGe:H) alloys at high rates using microwave glow discharge. The optimum substrate temperature is found to be higher and deposition pressure lower than the case for materials deposited at low rates using radio-frequency glow discharge. Using the optimized conditions, we report an active-area efficiency of 11.44% for a double-junction, dual-gap a-Si:H alloy solar cell in which the bottom cell incorporates a-SiGe:H alloy deposited at 100 A/s.