Electrical characterization of Al_xGa_(1-x)As grown by low-pressure organometallic vapor phase epitaxy using trimethylamine alane as the aluminum precursor

摘要

The electrical properties of Al_xGa_(1-x)As (0 ≤ x ≤ 0.44) grown by organometallic vapor phase epitaxy using trimethylamine alane as the Al precursor were investigated. High-quality AlGaAs Schottky barriers were fabricated and characterized by current-voltage, capacitance-voltage, and deep level transient spectroscopy measurements. The epilayers showed excellent electrical characteristics with low overall trap concentrations. In particular, the Al_xGa_(1-x)As layers contained very low concentrations of EL2.