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Mechanisms of target poisoning during magnetron sputtering as investigated by real-time in situ analysis and collisional computer simulation

机译:实时原位分析和碰撞计算机模拟研究磁控溅射过程中靶材中毒的机理

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摘要

The evolution of reactive gas uptake at the target surface has been investigated by real-time in situ diagnostics during magnetron sputtering. Using a planar circular dc magnetron for reactive sputter deposition of TiN from a Ti target in an argonitrogen gas mixture, the target uptake of nitrogen was determined at varying gas flows of nitrogen using the ~(14)N(d,α)~(12)C nuclear reaction, directly demonstrating the target "poisoning" effect. The expected hysteresis behavior at increasing/decreasing nitrogen gas flow is confirmed. Within the precision of the measurement, the nitrogen content remains unaltered after switching off the magnetron, indicating the absence of a significant mobile fraction of nitrogen in the target. The maximum amount of retained nitrogen significantly exceeds one adsorbed monolayer, which is attributed to nitrogen ion implantation and recoil implantation of adsorbed nitrogen. This is quantitatively reproduced by TRIDYN collisional computer simulations.
机译:通过磁控溅射过程中的实时原位诊断研究了靶表面反应性气体吸收的演变。使用平面圆形直流磁控管从氩气/氮气混合物中的Ti靶材进行反应溅射TiN沉积时,使用〜(14)N(d,α)〜在变化的氮气流下确定氮的靶材吸收量(12)C核反应,直接证明目标“中毒”效果。确认了在氮气流量增加/减少时的预期磁滞行为。在测量精度范围内,关闭磁控管后,氮含量保持不变,这表明目标中没有明显的活动氮含量。保留的氮的最大量明显超过一个吸附的单层,这归因于氮离子的注入和吸附氮的反冲注入。这是TRIDYN碰撞计算机模拟定量复制的。

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