Epitaxial thin film growth of Ca_(2)RuO_(4+δ) by pulsed laser deposition

摘要

Epitaxial Ca_(2)RuO_(4+δ) thin films have been grown on (001) LaAlO_(3) substrate by pulsed laser deposition. X-ray diffraction and transmission electron microscopy studies show that the films are single crystal with good structural quality. The films are determined to have quasitetragonal structure with a=5.352(8) A, c=12.20(9) A and epitaxially grown on the substrate with in-plane tensile strains. C plane of the film is parallel to the substrate surface and its <100> is along <110> of the pseudocubic LaAlO_(3) cell. Resistivity versus temperature measurement reveals that the thin film has metallic-like behavior with low resistivity (<0.002 Ω cm) and no metal-to-insulator transition between 2 and 300 K, different from its bulk material property.