Improved characteristics of organic light-emitting devices by surface modification of nickel-doped indium tin oxide anode

摘要

This letter presents the optoelectrical performance of an organic light-emitting diode (OLED) through the elevation of indium tin oxide (ITO) anode work function by Ni co-sputter surface doping and additional O_(2) plasma treatment. The turn-on voltage of OLED devices can be reduced by 2.3 V for Ni atomic concentration greater than 1.8% and by 2.7 V for the additional O_(2) plasma treatment. Devices with Ni(2.6%)-doped and O_(2) plasma treated ITO anodes perform the highest luminance efficiency (0.91 lm/W), three times larger than undoped ITO (0.31 lm/W) at 250 cd/m~(2).