Lateral n-p junction for acoustoelectric nanocircuits

摘要

We report the experimental realization of a device comprising a lateral n-p junction grown by focused-ion molecular-beam epitaxy and a transducer to generate a surface acoustic wave. Acoustic charge transport across the junction and the accompanying photon emission are demonstrated. This type of light-emitting diode is suitable for integration into acoustoelectric nanocircuits in which quasione-dimensional semiconductor channels serve as "wires" through which packets of charge are transported by surface acoustic waves. The diode provides a means by which to extend the functionality of acoustoelectric nanocircuits into the optical domain.