Microstructure and properties of single crystal BaTiO_(3) thin films synthesized by ion implantation-induced layer transfer

摘要

Single crystal BaTiO_(3) thin films have been transferred onto Pt-coated and Si_(3)N_(4)-coated substrates by the ion implantation-induced layer transfer method using H~(+) and He~(+) ion coimplantation and subsequent annealing. The transferred BaTiO_(3) films are single crystalline with root mean square roughness of 17 nm. Polarized optical and piezoresponse force microscopy (PFM) indicate that the BaTiO_(3) film domain structure closely resembles that of bulk tetragonal BaTiO_(3) and atomic force microscopy shows a 90° a-c domain structure with a tetragonal angle of 0.5°-0.6°. Micro-Raman spectroscopy indicates that the local mode intensity is degraded in implanted BaTiO_(3) but recovers during anneals above the Curie temperature. The piezoelectric coefficient, d_(33), is estimated from PFM to be 80-100 pm/V and the coercive electric field (E_(c)) is 12-20 kV/cm, comparable to those in single crystal BaTiO_(3).