Metalorganic vapor phase epitaxy InSb p~(+)nn~(+) photodiodes with low dark current

摘要

Photodiodes of InSb were fabricated on epilayers grown by metalorganic vapor phase epitaxy (MOVPE). Dark reverse current density as low as 1×10~(-7) A/cm~(2) at -0.1 V bias, and zero-bias-resistance area products as high as 1×10~(6) Ω cm~(2) were measured. These values are comparable to the best values reported for InSb diodes grown by molecular-beam epitaxy. The very good uniformity of the diode dark current implies that MOVPE is a promising growth technique for the fabrication of state-of-the-art focal plane InSb detector arrays.