Fabrication of vertically aligned carbon nanowalls using capacitively coupled plasma-enhanced chemical vapor deposition assisted by hydrogen radical injection

摘要

Two-dimensional carbon nanostructures (carbon nanowalls) were fabricated using capacitively coupled radio-frequency plasma-enhanced chemical vapor deposition assisted by H radical injection. Carbon nanowalls were grown on Si, SiO_(2), and sapphire substrates without catalyst, and independent of substrate materials. Correlation between carbon nanowall growth and fabrication conditions, such as carbon source gases was investigated. In the case using C_(2)F_(6)/H_(2) system, aligned carbon nanowalls were grown vertically on the substrate, while carbon nanowalls grown using CH_(4)/H_(2) system were waved and thin (<10 nm). In the case of the deposition without H radical injection, on the other hand, carbon nanowalls were not fabricated.