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首页> 外文期刊>Journal of nanoscience and nanotechnology >Synthesis of Vertically Aligned Carbon Nanofibers-Carbon Nanowalls by Plasma-Enhanced Chemical Vapor Deposition
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Synthesis of Vertically Aligned Carbon Nanofibers-Carbon Nanowalls by Plasma-Enhanced Chemical Vapor Deposition

机译:等离子体增强化学气相沉积法合成垂直排列的碳纳米纤维-碳纳米壁

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摘要

Vertically aligned carbon nanofibers (VA-CNFs)-carbon nanowalls (CNWs) have been prepared on a silicon (Si) substrate by plasma-enhanced chemical vapor deposition. The VA-CNFs-CNWs were formed at bias voltage of -185 V, whereas conventional VA-CNFs were synthesized under conditions of high bias voltages. Degenerated CNWs with turbostratic graphite structure were created on amorphous carbon layer around CNFs like a flag attached to a pole, which is evidenced by scanning electron microscopy, transmission electron microscopy, electron diffraction, and micro-Raman spectroscopy. Electron field emission characteristics of VA-CNFs-CNWs with unique microstructure, fabricated on the Si substrate, were primarily investigated. As a result, the VA-CNFs-CNWs showed the turn-on and the threshold fields of 1.7 V · μm~(-1) and 3.35 V ·μm~(-1) with current densities of 10 nA · cm~(-2) and 1 μA · cm~(-2), respectively. The field enhancement factor β was estimated to be 1059 by using Fowler-Nordheim theory.
机译:通过等离子增强化学气相沉积法在硅(Si)基板上制备了垂直排列的碳纳米纤维(VA-CNF)-碳纳米壁(CNW)。 VA-CNFs-CNWs是在-185 V的偏置电压下形成的,而常规的VA-CNFs是在高偏置电压的条件下合成的。具有CNC的非晶碳层在CNF周围的非晶碳层上形成了退化的CNW,就像附着在极上的标志一样,这通过扫描电子显微镜,透射电子显微镜,电子衍射和显微拉曼光谱法得到了证明。主要研究了在硅衬底上制造的具有独特微观结构的VA-CNFs-CNW的电子场发射特性。结果,VA-CNFs-CNWs的导通和阈值场分别为1.7 V·μm〜(-1)和3.35 V·μm〜(-1),电流密度为10 nA·cm〜(- 2)和1μA·cm〜(-2)。利用Fowler-Nordheim理论,场增强因子β估计为1059。

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