Temperature-insensitive Ge-B-SiO_(2) planar lightwave circuits by inductively coupled plasma-enhanced chemical vapor deposition

摘要

Low-propagation-loss Ge-B-SiO_(2) planar waveguides have been achieved by inductively coupled plasma-enhanced chemical vapor deposition. The significant effects due to annealing temperature, hydrogen loading, and KrF excimer ultraviolet laser irradiation on the optical properties of Ge-B-SiO_(2) films have been investigated. A temperature-insensitive Mach-Zehnder interferometer-like optical filter has been demonstrated by means of a double-core fabrication method using 10GeO_(2)-90SiO_(2) (10G90S) and 8GeO_(2)-5B_(2)O_(3)-87SiO_(2) (8G5B87S) as two different waveguide cores. We have achieved less than 0.5 pm/℃ temperature dependence of the central wavelength of the filter at 1550 nm while varying the temperature from -20 to 80℃.