Low temperature InP/Si wafer bonding

摘要

An oxide-free, covalently bonded interface of InP/silicon wafer pairs has been realized at low temperature by B_(2)H_(6) plasma treatment of bonding surfaces in the reactive ion etch mode followed by a HF dip and room temperature bonding in air. The bonding energy reaches InP fracture surface energy of 630 mJ/m~(2) at 200℃. A total B-doped amorphous layer of about 15 A with peak concentration of ～2×10~(20) cm~(-3) was detected at the bonding interface. The release of hydrogen at low temperature from B-H complexes and subsequent absorption of the atomic hydrogen by the amorphous layer at the bonding interface is most likely responsible for the enhanced bonding energy.