Low-threshold field emission from cesiated silicon nanowires

摘要

Field-emission studies on Si nanowires (Si NWs) grown by the vapor-liquid-solid (VLS) technique are presented. The field-emission properties of the Si NWs were characterized in ultrahigh vacuum following several postgrowth processes such as catalyst etching, in situ annealing, and cesiation. The average threshold field of cesiated Si NWs was found to be ～7.76±0.55 V/μm and showed a significant improvement over that of as-grown NWs (average threshold field ～11.58 V/ μm). The superior field-emission characteristics are attributed to the combination of cesiation and quality of the NWs' surface grown via hydrogen reduction of silicon tetrachloride.