Room temperature continuous-wave operation of InAsSb quantum-dot distributed feedback lasers

摘要

InAsSb self-assembled quantum-dot (QD) distributed feedback (DFB) lasers based on (001) InP substrate have been grown by metalorganic vapor-phase epitaxy. A highly tensile-strained InGaAs was used as the barrier layer for InAsSb QDs. Single-mode emissions near 1.87 μm have been demonstrated from narrow ridge waveguide DFB lasers in continuous-wave operation at temperatures up to 320 K (47 ℃), with a characteristics temperature of 55 K up to temperature of 310 K.