Design and simulation of InGaAs/AIAsSb quantum-cascade lasers for short wavelength emission

摘要

The design and simulation of an In_(0.53)Ga_(0.47)As/Al_(0.56)As_(0.44)Sb quantum-cascade laser emitting in the near infrared is presented. Designed using a self-consistent rate equation solver coupled with an energy balance rate equation, the proposed laser has a calculated population inversion of ～20% at 77 K and sufficient gain to achieve room-temperature laser emission at λ～2.8 μm. Threshold currents in the range 4-8 kA/cm~2 are estimated as the temperature increases from 77 K to 300 K. The output characteristics of the proposed laser are compared to an existing λ～3.1 μm In_(0.53)Ga_(0.47)As/Al_(0.56)As_(0.44)Sb quantum-cascade structure presented in the literature.