Design and simulation of InGaAs/AlAsSb quantum-cascade lasers for short wavelength emission

摘要

The design and simulation of an In-0.53Ga-0.47As/Al-0.56As-0.44Sb quantum-cascade laser emitting in the near infrared is presented. Designed using a self-consistent rate equation solver coupled with an energy balance rate equation, the proposed laser has a calculated population inversion of ~20% at 77 K and sufficient gain to achieve room-temperature laser emission at λ ~2.8 µm. Threshold currents in the range 4–8 kA/cm2 are estimated as the temperature increases from 77 K to 300 K. The output characteristics of the proposed laser are compared to an existing λ ~3.1 µm In-0.53Ga-0.47As/Al-0.56As-0.44Sb quantum-cascade structure presented in the literature. ud