Midinfrared intersubband absorption in lattice-matched AlInN/GaN multiple quantum wells

摘要

We report the observation of midinfrared intersubband (ISB) absorption in nearly lattice-matched AlInN/GaN multiple-quantum-wells. A clear absorption peak is observed around 3 μm involving transitions from the conduction band ground state to the first excited state. In addition to ISB absorption, photoluminescence experiments were carried out on lattice- matched AlInN/GaN single quantum wells in order to determine the spontaneous polarization discontinuity between GaN and Al_(0.82)In_(0.18)N compounds. The experimental value is in good agreement with theoretical predictions. Our results demonstrate that the AlInN/GaN system is very promising to achieve crack-free and low dislocation density structures dedicated to intersubband devices in the 2-4 μm wavelength range.