Intersubband Transitions in Lattice-Matched AlInN/GaN Heterostructures

摘要

Intersubband transitions in lattice-matched AlInN/GaN heterostructures grown by molecular-beam epitaxy were studied with infrared absorption, photocurrent and resonant tunneling measurements. Strong near-infrared absorption was observed at room temperature in the technologically relevant 2.1-2.9 µm. The results show the potential of lattice-matched nitrides for near- and far-infrared intersubband devices such as lasers and detectors.